technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com n-channel mosfet qualified per mil-prf-19500/542 t4-lds-0152 rev. 2 (100858) page 1 of 3 devices levels 2n6760 jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditio ns symbol value unit drain ? source voltage v ds 400 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 5.5 adc continuous drain current t c = +100c i d2 3.5 adc max. power dissipation t c = +25c p tl 75 (1) w drain to source on state resistance r ds(on) 1.0 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.6 w/c for t c > +25c (2) v gs = 10vdc, i d = 3.5a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 400 vdc gate-source voltage (threshold) v ds v gs , i d = 0.25ma v ds v gs , i d = 0.25ma, t j = +125c v ds v gs , i d = 0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = 320v v gs = 0v, v ds = 400v, t j = +125c v gs = 0v, v ds = 320v, t j = +125c i dss1 i dss2 i dss3 25 1.0 0.25 adc madc madc static drain-source on-state resistance v gs = 10v, i d = 3.5a pulsed v gs = 10v, i d = 5.5a pulsed v gs = 10v, i d = 3.5a pulsed, t j = +125c r ds(on)1 r ds(on)2 r ds(on)3 1.0 1.22 2.2 diode forward voltage v gs = 0v, i d = 5.5a pulsed v sd 1.5 vdc to-204aa (to-3) 2n6760
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com t4-lds-0152 rev. 2 (100858) page 2 of 3 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = 10v, i d = 5.5a v ds = 320v q g(on) q gs q gd 39 6.0 20 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = 5.5a, v gs = 10vdc, gate drive impedance = 7.5 , v dd = 200vdc t d(on) t r t d(off) t f 30 40 80 30 ns diode reverse recovery time di/dt 100a/s, v dd 30v, i f = 5.5a t rr 700 ns
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com t4-lds-0152 rev. 2 (100858) page 3 of 3 package dimensions dimensions ltr inches millimeters notes min max min max cd .875 22.23 ch .250 .360 6.35 9.14 hr .495 .525 12.57 13.34 hr1 .131 .188 3.33 4.78 ht .060 .135 1.52 3.43 ld .038 .043 0.97 1.09 ll .312 .500 7.92 12.70 ll1 .050 1.27 mhd .151 .161 3.84 4.09 mhs 1.177 1.197 29.90 30.40 ps .420 .440 10.67 11.18 3, 5 ps1 .205 .225 5.21 5.72 3, 5 s1 .655 .675 16.64 17.15 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 these dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. when gauge is not used measurement will be made at the seating plane. 4 the seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5 mounting holes shall be deburred on the seating plane side. 6 drain is electrically connected to the case. 7 in accordance with asme y14.5m , diameters are equivalent to x symbology. * figure 1: physical dimensions of transistor (to-204aa).
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